6.2 & 6.55 volt temperature compensated surface mount zener reference diodes www. microsemi . com scottsdale division 1n821ur thru 1n829aur-1, e3 (or mll821 thru mll829-1, e3) 1n821ur thru 1n829aur-1 description appearance the 1n821ur thru 1n829aur-1 series of surface mount zero-tc reference diodes provides a selection of both 6.2 v and 6.55 v nominal voltages and temperature coefficients to as low as 0.0005%/ o c for minimal voltage change with temperature when operated at 7.5 ma. these glass surface mount do-213aa (melf) reference diodes are optionally available with an internal-metallurgical-bond by adding a ?-1? suffix as well as rohs compliant with an e3 suffix. this type of bonded zener package construction is also available in jan, jantx, and jantxv military qualifications (rohs compliant option not applicable). microsemi also offers numerous other zener referenc e diode products for a variety of other voltages up to 200 v. do-213aa important: for the most current data, consult microsemi?s website: http://www.microsemi.com features applications / benefits ? surface mount equivalent of jedec registered 1n821 thru 1n829 series ? internal metallurgical bond option available by adding a ?-1? suffix ? reference voltage selection of 6.2 v & 6.55 v +/-5% with further tight tolerance options at lower voltage ? 1n821, 823, 825, 827 and 829 also have surface mount qualification to mil-prf-19500/159 by adding the jan, jantx, or jantxv prefixes to part numbers a well as the ?-1? suffix; e.g. jantx1n829- 1, etc. ? rohs compliant devices available by adding an e3 suffix (not applicable to military) ? axial-leaded equivalents also available in do-35 or do-7 without the ur suffix (see separate data sheet) including military qualifications up to jans for do-7 (see separate data sheet) ? jans equivalent available in do-213aa via scd ? provides minimal voltage changes over a broad temperature range ? for instrumentation and other circuit designs requiring a stable voltage reference ? maximum temperature coefficient selections available from 0.01%/oc to 0.0005%/oc ? tight reference voltage tolerances available with center nominal value of 6.15 v by adding designated tolerance such as 1%, 2%, 3%, etc. after the part number for identification e.g. 1n827ur-2%, 1n829aur-1-1%, etc. ? small surface-mount footprint ? nonsensitive to esd per mil-std-750 method 1020 ? typical low capacitance of 100 pf or less , e3 microsemi scottsdale division page 1 maximum ratings mechanical and packaging ? operating temperatures: -65 o c to +175 o c ? storage temperatures: -65 o c to +175 o c ? dc power dissipation: 500 mw @ t l = 25 o c and maximum current i zm of 70 ma. note: for optimum voltage-tem perature stability, i z = 7.5 ma (less than 50 mw in dissipated power) ? solder temperatures: 260 o c for 10 s (max) ? case: hermetically sealed glass case. do-213aa package ? terminals: leads, tin-lead (military) or rohs compliant annealed matte tin plating solderable per mil-std-750, method 2026 ? marking: cathode band (except double anode 1n822 and 1n824) ? polarity: reference diode to be operated with the banded end positive with respect to the opposite end ? tape & reel option: standard per eia-481-b with 12 mm tape, 2000 per 7 inch reel or 5000 oer 13 inch reel (add ?tr? suffix to part number) ? weight: 0.04 grams. ? see package dimensions on last page copyright ? 2005 7-18-2005 rev b 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503
6.2 & 6.55 volt temperature compensated surface mount zener reference diodes www. microsemi . com scottsdale division 1n821ur thru 1n829aur-1, e3 (or mll821 thru mll829-1, e3) 1n821ur thru 1n829aur-1 *electrical characteristics @ 25 o c, unless otherwise specified zener voltage (note 1 and 4) v z @ i zt zener test current i zt maximum zener impedance (note 2) z zt @ i zt maximum reverse current i r @ 3 v voltage temperature stability ( v zt max) -55 o c to +100 o c (note 3 and 4) effective temperature coefficient vz jedec type number (notes 1, 5 & 6) volts ma ohms a mv %/ o c 1n821ur 1n821aur 1n822ur ? 1n823ur 5.9 ? 6.5 5.9 ? 6.5 5.9 ? 6.5 5.9 ? 6.5 7.5 7.5 7.5 7.5 15 10 15 15 2.0 2.0 2.0 2.0 96 96 96 48 0.01 0.01 0.01 0.005 1n823aur 1n824ur ? 1n825ur 1n825aur 5.9 ? 6.5 5.9 ? 6.5 5.9 ? 6.5 5.9 ? 6.5 7.5 7.5 7.5 7.5 10 15 15 10 2.0 2.0 2.0 2.0 48 48 19 19 0.005 0.005 0.002 0.002 1n826ur 1n827ur 1n827aur 1n828ur 6.2 ? 6.9 5.9 ? 6.5 5.9 ? 6.5 6.2 ? 6.9 7.5 7.5 7.5 7.5 15 15 10 15 2.0 2.0 2.0 2.0 20 9 9 10 0.002 0.001 0.001 0.001 1n829ur 1n829aur 5.9 ? 6.5 5.9 ? 6.5 7.5 7.5 15 10 2.0 2.0 5 5 0.0005 0.0005 *jedec registered data. ?double anode; electrical specific ations apply under both bias polarities. notes: 1. add a ?-1? suffix for internal metallurgical bond. when orde ring devices with tighter toler ances than specified for the v z voltage nominal of 6.15 v, add a further hyphened suffix number % to the part number for desired tolerance, e.g. 1n827ur-1-2%, 1n829ur-1-1%, 1n829aur-1%, 1n829aur-1-1%, etc. 2. zener impedance is measured by superimpos ing 0.75 ma ac rms on 7.5 ma dc @ 25 o c. 3. the maximum allowable change observed over the entire temperature range i.e., the diode voltage will not exceed the specifie d mv change at any discrete temperature between the established limits. 4. voltage measurements to be performed 15 seconds after application of dc current. 5. 1n821ur-1, 1n823ur-1, 1n825ur-1, 1n827ur-1, and 1n829ur-1 also have qualification to mil-prf-19500/159 by adding the jan, jantx, or jantxv prefix to part numbers as well as t he ?-1? suffix; e.g. jantx1n827u r-1, jantxv1n829ur-1, etc. 6. this product series has also been previously identified as the mll821 thru ml l829a-1. this alternate name may still be used. , e3 microsemi scottsdale division page 2 copyright ? 2005 7-18-2005 rev b 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503
6.2 & 6.55 volt temperature compensated surface mount zener reference diodes www. microsemi . com scottsdale division 1n821ur thru 1n829aur-1, e3 (or mll821 thru mll829-1, e3) 1n821ur thru 1n829aur-1 graphs i z ? operating current (ma) i z ? operating current (ma) change in temperature coefficient (mv/ o c) change in temperature coefficient (%/ o c) v z ? change in zener voltage (mv) figure 2 figure 3 typical change of temperature coefficien t typical change of zener voltage with change in operating current. with change in operating current the curve shown in figure 2 is typical of the diode series and greatly simplifies the estimation of the temperature coeffici ent (tc) when the diode is operated at currents other than 7.5ma. this curve in figure 3 illustrates the change of diode voltage arising from the effect of impedance. it is in effect an exploded view of the zener operating region of the i-v characteristic. in conjunction with figure 2, this curve can be used to estimate total voltage regulation under conditions of both varying temperature and current. example: a diode in this series is operated at a current of 7.5ma and has specified temperature coeffici ent (tc) limits of +/-0.005%/ o c. to obtain the typical temperature coefficient limits for this same diode operated at a current of 6.0ma, the new tc limits (%/ o c) can be estimated using the graph in figure 2. at a test current of 6.0ma the change in temperature coefficient (tc) is approximately ?0.0006%. o c. the algebraic sum of +/-0.005% o c and ? 0.0006%/ o c gives the new estimated limits of +0.0044%/oc and -0.0056%/oc. package dimensions inches millimeters dim min max min max a 0.063 0.067 1.60 1.70 b 0.130 0.146 3.30 3.70 c 0.016 0.022 0.41 0.55 pad layout inches mm a .200 5.08 b .055 1.40 c .080 2.03 , e3 microsemi scottsdale division page 3 copyright ? 2005 7-18-2005 rev b 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503
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